2sB857, 2sb858 silicon pnp triple diffused application low frequency power amplifier complementary pair with 2sd1133 and 2sd1134 outline 1. base 2. collector (flange) 3. emitter to-220ab 1 2 3 absolute maximum ratings (ta = 25?) ratings item symbol 2sB857 2sb858 unit collector to base voltage v cbo ?0 ?0 v collector to emitter voltage v ceo ?0 ?0 v emitter to base voltage v ebo ? ? v collector current i c ? ? a collector peak current i c(peak) ? ? a collector power dissipation p c * 1 40 40 w junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c note: 1. value at t c = 25 c
2sB857, 2sb858 2 electrical characteristics (ta = 25?) 2sB857 2sb858 item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo ?0 ?0 v i c = ?0 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo ?0 ?0 v i c = ?0 ma, r be = emitter to base breakdown voltage v (br)ebo ? ? v i e = ?0 m a, i c = 0 collector cutoff current i cbo 1 1 m av cb = ?0 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 60 320 v ce =i c = ? a* 2 h fe2 35 35 ? v i c = ?.1 a* 2 collector to emitter saturation voltage v ce(sat) 1 1v i c = ? a, i b = ?.2 a* 2 base to emitter voltage v be 1 1v v ce = ? v, i c = ? a* 2 gain bandwidth product f t ?5 ?5 mhzv ce = ? v, i c = ?.5 a* 2 notes: 1. the 2sB857 and 2sb858 are grouped by h fe1 as follows. 2. pulse test bcd 60 to 120 100 to 200 160 to 320 0 50 100 150 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 20 40 60 ?.05 ?.1 ?.2 ?.5 ?.0 ? ? collector to emitter voltage v ce (v) collector current i c (a) ? ? ? ?0 ?0 ?0 ?00 area of safe operation i c max (continuous) (?0 v, ? a) t c = 25 c dc operation (?0 v, ?.24 a) (?0 v, ? a) 2sB857 2sb858 (?0 v, ?.15 a)
2sB857, 2sb858 3 collector to emitter voltage v ce (v) collector current i c (a) ? ? ? ? ?0 typical output characteristics 0 ? ? ? ? ? t c = 25 c p c = 40 w i b = 0 ?0 ma ?0 ?0 ?0 ?0 ?0 ?0 ?.01 ?.02 ?.05 ?.1 ?.2 ?.5 ?.0 ? ? base to emitter voltage v be (v) collector current i c (a) 0 ?.2 ?.4 ?.6 ?.8 ?.0 ?.2 ?.4 typical transfer characteristics v ce = ? v t c = 75 c 25 ?5 5 10 20 50 100 200 500 1,000 collector current i c (a) dc current transfer ratio h fe ?.01?.02 ?.05?.1 ?.2 ?.5 ?.0 ? ? dc current transfer ratio vs. collector current v ce = ? v t c = 75 c 25 ?5 0 ?.2 ?.4 ?.6 ?.8 ?.0 ?.2 ?.4 collector current i c (a) collector to emitter saturation voltage v ce (sat) (v) ?.01?.02 ?.05 ?.1 ?.2 ?.5 ?.0 ? ? collector to emitter saturation voltage vs. collector current t c = 75 c 25 ?5 i c = 10 i b
0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?.1 f 3.6 +0.1 -0.08 hitachi code jedec eiaj weight (reference value) to-220ab conforms conforms 1.8 g unit: mm
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